activity
20082026
most citedProbing low noise at the MOS interface with a spin-orbit qubit

112 citations · 658 across the 17 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

10 papers · 1 filter

cond-mat.mes-hall2026

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots

N. Tobias Jacobson, Natalie D. Foster, Ryan M. Jock +5

While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface result…

cond-mat.mes-hall2022★ 11 cited

Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

Steve M. Young, N. Tobias Jacobson, Jason R. Petta

Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a…

cond-mat.mes-hall2021★ 47 cited

A silicon singlet-triplet qubit driven by spin-valley coupling

Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph +3

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-…

cond-mat.mes-hall2018★ 12 cited

All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson +12

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically contro…

cond-mat.mes-hall2017★ 112 cited

Probing low noise at the MOS interface with a spin-orbit qubit

Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard +12

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers…

cond-mat.mes-hall2017★ 4 cited

Spectroscopy of multi-electrode tunnel barriers

A. Shirkhorshidian, John King Gamble, L. Maurer +8

Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-elec…