activity
20042024
most citedSpin Hall effect transistor

334 citations · 2.8k across the 57 of their papers we have counts for

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Showing 2010Show all

7 papers · 1 filter

cond-mat.mtrl-sci2010★ 26 cited

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

M. Kopecky, J. Kub, F. Maca +6

We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are prese…

cond-mat.mtrl-sci2010★ 5 cited

Molecular Beam Epitaxy of LiMnAs

V. Novak, M. Cukr, Z. Soban +5

We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn…

cond-mat.mes-hall2010★ 334 cited

Spin Hall effect transistor

J. Wunderlich, B. G. Park, A. C. Irvine +6

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing techn…

cond-mat.mtrl-sci2010★ 54 cited

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

T. Jungwirth, P. Horodyska, N. Tesarova +13

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealin…

cond-mat.mtrl-sci2010★ 40 cited

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

J. Masek, F. Maca, J. Kudrnovsky +10

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and…

cond-mat.mtrl-sci2010★ 17 cited

Strain control of magnetic anisotropy in (Ga,Mn)As microbars

C. King, J. Zemen, K. Olejník +8

We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive la…