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Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode
Deep Jariwala, Vinod K. Sangwan, Chung-Chiang Wu +5
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of re…
Low Frequency Electronic Noise in Single-Layer MoS2 Transistors
Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala +3
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic no…
Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
Chung-Chiang Wu, Deep Jariwala, Vinod K. Sangwan +3
The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy.…
Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis
Mariana C. Prado, Deep Jariwala, Tobin J. Marks +1
Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy a…
Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late +5
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room…
Extrinsic and Intrinsic Photoresponse in Monodisperse Carbon Nanotube Thin Film Transistors
Erik Sczygelski, Vinod K. Sangwan, Chung-Chiang Wu +5
Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotube…