activity
20062026
most citedEmerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2.8k citations · 16.1k across the 70 of their papers we have counts for

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9 papers · 1 filter

physics.app-ph2025

Robust interpretation of electrochemical impedance spectra using numerical complex analysis

Jithin D. George, Willa Brenneis, Vinod K. Sangwan +9

Electrochemical Impedance Spectroscopy (EIS) is a non-invasive technique widely used for understanding charge transfer and charge transport processes in electrochemical systems and…

physics.app-ph2023★ 40 cited

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci +14

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential re…

physics.app-ph2019★ 37 cited

Low Frequency Carrier Kinetics in Perovskite Solar Cells

Vinod K. Sangwan, Menghua Zhu, Sarah Clark +4

Hybrid organic-inorganic halide perovskite solar cells have emerged as leading candidates for third-generation photovoltaic technology. Despite the rapid improvement in power conve…

physics.app-ph2018★ 16 cited

Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors

Satyaprasad P. Senanayak, Vinod K. Sangwan, Julian J. McMorrow +6

The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach t…

physics.app-ph2018★ 38 cited

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Alex Henning, Vinod K. Sangwan, Hadallia Bergeron +4

Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whos…

physics.app-ph2018★ 2 cited

Gate-tunable memristors from monolayer MoS2

Vinod K. Sangwan, Hong-Sub Lee, Mark C. Hersam

We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel…