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Developing a Chemical and Structural Understanding of the Surface Oxide in a Niobium Superconducting Qubit
Akshay A. Murthy, Paul Masih Das, Stephanie M. Ribet +11
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in rece…
Observation of current-induced switching in non-collinear antiferromagnetic IrMn by differential voltage measurements
Sevdenur Arpaci, Victor Lopez-Dominguez, Jiacheng Shi +9
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-or…
Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene MoS2 van der Waals Heterojunction
Stephanie Bettis Homan, Vinod K. Sangwan, Itamar Balla +3
Van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic…
Control of interlayer delocalization in 2H transition metal dichalcogenides
Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective…
Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
V. K. Sangwan, D. Jariwala, I. S. Kim +4
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced signif…
Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
Sarah L. Howell, Deep Jariwala, Chung-Chiang Wu +6
The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteris…