Ying Guo

collaborators

3 papers

cond-mat.mes-hall2024

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications

Linqiang Xu, Shiqi Liu, Qiuhui Li +6

Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1)…

physics.app-ph2023

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications

Linqiang Xu, Lianqiang Xu, Jun Lan +7

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…

cond-mat.mtrl-sci2023

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li +7

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications

Sub-5-nm Ultra-thin In2​O3​ Transistors for High-Performance and Low-Power Electronic Applications

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications