Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li +7

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…