197 citations · 2.8k across the 70 of their papers we have counts for
57 papers · 1 filter
Spin-valley locking for in-gap quantum dots in a MoS2 transistor
Radha Krishnan, Sangram Biswas, Yu-Ling Hsueh +3
Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lat…
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
Merritt P. Losert, M. A. Eriksson, Robert Joynt +4
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two l…
Optimisation of electrically-driven multi-donor quantum dot qubits
Abhikbrata Sarkar, Joel Hochstetter, Allen Kha +4
Multi-donor quantum dots have been at the forefront of recent progress in Si-based quantum computation. Among them, qubits have a built-in dipole moment, enabling all-elect…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Novel characterisation of dopant-based qubits
B. Voisin, J. Salfi, R. Rahman +1
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building…