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20092020
most citedPhotonic crystals for nano-light in moiré graphene superlattices

401 citations · 1.7k across the 12 of their papers we have counts for

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11 papers · 1 filter

cond-mat.mes-hall2020★ 22 cited

Dual-gated graphene devices for near-field nano-imaging

Sai S. Sunku, Dorri Halbertal, Rebecca Engelke +11

Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon pol…

cond-mat.mes-hall2020★ 51 cited

Nano-photocurrent mapping of local electronic structure in twisted bilayer graphene

Sai S. Sunku, Alexander S. McLeod, Tobias Stauber +10

We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as…

cond-mat.mes-hall2019★ 401 cited

Photonic crystals for nano-light in moiré graphene superlattices

S. S. Sunku, G. X. Ni, B. -Y. Jiang +10

Graphene is an atomically thin plasmonic medium that supports highly confined plasmon polaritons, or nano-light, with very low loss. Electronic properties of graphene can be drasti…

cond-mat.mes-hall2017★ 73 cited

Plasmon reflections by topological electronic boundaries in bilayer graphene

Bor-Yuan Jiang, Guang-Xin Ni, Zachariah Addison +7

Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic bound…

cond-mat.mes-hall2013★ 99 cited

Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Guang-Xin Ni, Hong-Zhi Yang, Wei Ji +5

Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotrop…

cond-mat.mes-hall2013★ 160 cited

An innovative way of etching MoS2: Characterization and mechanistic investigation

Yuan Huang, Jing Wu, Xiangfan Xu +9

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be…

cond-mat.mes-hall2013★ 148 cited

Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport

Guang-Xin Ni, Yi Zheng, Sukang Bae +8

The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to…

cond-mat.mes-hall2013★ 180 cited

Graphene-Ferroelectric Hybrid Structure for Flexible Transparent Electrodes

Guang-Xin Ni, Yi Zheng, Sukang Bae +6

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode a…

cond-mat.mes-hall2011★ 77 cited

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Yi Zheng, Guang-Xin Ni, Sukang Bae +9

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphen…

cond-mat.mes-hall2010★ 224 cited

Graphene field effect transistors with ferroelectric gating

Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +3

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non…

cond-mat.mes-hall2009★ 257 cited

Gate-controlled non-volatile graphene-ferroelectric memory

Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +4

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the…