activity
20232026
collaborators

6 papers

physics.ins-det2026

Development of LGAD Sensor Technology on 12 inch Wafers for 3D Integration with advanced CMOS processes

Ron Lipton, Julie Segal, Angela Kok +10

We report on the design, simulation, and initial testing of Low Gain Avalanche Diode (LGAD) sensors fabricated in 65 nm CMOS technology on 12 inch wafers. These sensors were develo…

cond-mat.mes-hall2026

Design and Modeling of the Charge Readout of a SiMOS Quantum Dot with a Single Electron Transistor and CryoCMOS

Adam Quinn, Troy England, Andrew Li +1

Single electron spin qubits trapped in SiMOS quantum dots are a promising technology for scaling to thousand- or million-qubit systems due to their compatibility with mature CMOS m…

physics.ins-det2026

PSEC6: an 8-Channel 40 GSa/s Waveform Sampling ASIC in TSMC 65nm with 10.24 GHz PLL

Ahan Datta, Andrew Arzac, Davide Braga +14

Picosecond level timing resolution is a prerequisite capability for improved coincidence matching, time-of-flight measurements, and secondary vertex reconstruction. Here, we presen…

physics.ins-det2026

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

Fabricio Alcalde Bessia, Claudio Chavez, Troy England +6

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double…

physics.ins-det2024

Design of an 8-Channel 40 GS/s 20 mW/Ch Waveform Sampling ASIC in 65 nm CMOS

Jinseo Park, Evan Angelico, Andrew Arzac +14

1 ps timing resolution is the entry point to signature based searches relying on secondary/tertiary vertices and particle identification. We describe a preliminary design for PSEC5…

physics.app-ph2023

A Sub-Electron-Noise Multi-Channel Cryogenic Skipper-CCD Readout ASIC

Fabricio Alcalde Bessia, Troy England, Hongzhi Sun +6

The \emph{MIDNA} application specific integrated circuit (ASIC) is a skipper-CCD readout chip fabricated in a 65 nm LP-CMOS process that is capable of working at cryogenic temperat…