76 citations · 744 across the 31 of their papers we have counts for
3 papers · 2 filters
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
Shijie Xu, Yan Huang, Farzad Mahfouzi +15
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…
All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci +14
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential re…
Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction
Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi +14
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the exte…