2 papers
physics.app-ph2026
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit +4
We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on se…
physics.app-ph2023
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…