221 citations · 265 across the 5 of their papers we have counts for
5 papers
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…
Low frequency noise in chemical vapor deposited MoS2
Yuji Wang, Xinhang Luo, Ningjiao Zhang +5
Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanos…
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…