1 citations · 5 across the 12 of their papers we have counts for
12 papers
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine +8
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have exp…
CMOS image sensor with micro-nano holes to improve NIR optical efficiency: micro-holes on top surface vs on bottom
E. Ponizovskaya Devine, Ahasan Ahamad, Ahmed Mayet +5
We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at…
Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm
Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat +5
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor…
Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response
Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet +7
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering…
Reconstruction-based spectroscopy using CMOS image sensors with random photon-trapping nanostructure per sensor
Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet +4
Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Em…
Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared
E. Ponizovskaya Devine, Ahasan Ahamed, Ahmed S. Mayet +7
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photo…