336 citations · 2.8k across the 67 of their papers we have counts for
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High Q electromechanics with InAs nanowire quantum dots
Hari S. Solanki, Shamashis Sengupta, Sudipta Dubey +7
In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (S…
Dual top gated graphene transistor in the quantum Hall regime
Ajay K. Bhat, Vibhor Singh, Sunil Patil +1
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the form…
Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric
Shamashis Sengupta, Kevin Wang, Kai Liu +4
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal tr…
Tunable thermal conductivity in defect engineered nanowires at low temperatures
Sajal Dhara, Hari S. Solanki, Arvind Pawan R. +7
We measure the thermal conductivity () of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 t…
Facile fabrication of lateral nanowire wrap-gate devices with improved performance
Sajal Dhara, Shamashis Sengupta, Hari S. Solanki +5
We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a…