15.5k citations · 29.7k across the 46 of their papers we have counts for
23 papers · 1 filter
Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown
Wanghao Tian, Bowen Shen, Lizhong Li +14
Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer i…
Mechanical sensing of metamagnetic tricriticality in two-dimensional CrI3
Feng Liu, Jiayong Xiao, Shengwei Jiang +2
Layered Ising metamagnets are antiferromagnetic (AF) materials consisting of monolayer Ising ferromagnets coupled to each other via interlayer AF interactions. They exhibit rich ma…
Imaging propagating terahertz collective modes in two-dimensional semiconductor double layers
Andrew T. Pierce, Chirag Vaswani, Dimitri Pimenov +7
Two-dimensional transition metal dichalcogenide (TMD) semiconductors exhibit a wide range of novel phenomena at millielectronvolt (terahertz-frequency) energy scales, including sup…
Quantum oscillations between excitonic and quantum spin Hall insulators in moiré WSe2
Zhongdong Han, Yiyu Xia, Kenji Watanabe +3
Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition bet…
Time-reversal symmetry breaking fractional quantum spin Hall insulator in moiré MoTe2
Kaifei Kang, Yichen Qiu, Bowen Shen +7
Twisted bilayer transition metal dichalcogenide semiconductors, which support flat Chern bands with enhanced interaction effects, realize a platform for fractional Chern insulators…
Relativistic Mott transition in strongly correlated artificial graphene
Liguo Ma, Raghav Chaturvedi, Phuong X. Nguyen +4
The realization of graphene has provided a bench-top laboratory for quantum electrodynamics. The low-energy excitations of graphene are two-dimensional massless Dirac fermions with…
Perfect Coulomb drag in a dipolar excitonic insulator
Phuong X. Nguyen, Liguo Ma, Raghav Chaturvedi +4
Excitonic insulators (EIs), arising in semiconductors when the electron-hole binding energy exceeds the band gap, are a solid-state prototype for bosonic phases of matter. Unlike t…
Air Stable and Layer Dependent Ferromagnetism in Atomically Thin van der Waals CrPS
Joolee Son, Suhan Son, Pyeongjae Park +15
Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered fer…
Tunable exciton-optomechanical coupling in suspended monolayer MoSe2
Hongchao Xie, Shengwei Jiang, Daniel A. Rhodes +3
The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include stro…
Evidence of high-temperature exciton condensation in 2D atomic double layers
Zefang Wang, Daniel A. Rhodes, Kenji Watanabe +4
A Bose-Einstein condensate is the ground state of a dilute gas of bosons, such as atoms cooled to temperatures close to absolute zero. With much smaller mass, excitons (bound elect…
Spectral and spatial isolation of single WSe quantum emitters using hexagonal boron nitride wrinkles
Raphaël S. Daveau, Tom Vandekerckhove, Arunabh Mukherjee +5
Monolayer WSe hosts bright single-photon emitters. Because of its compliance, monolayer WSe conforms to patterned substrates without breaking, thus creating the potential f…
Gate-tunable spin waves in antiferromagnetic atomic bilayers
Xiao-Xiao Zhang, Lizhong Li, Daniel Weber +3
The emergence of two-dimensional (2D) layered magnetic materials has opened an exciting playground for both fundamental studies of magnetism in 2D and explorations of spinbased app…
Two-dimensional magnetic nanoelectromechanical resonators
Shengwei Jiang, Hongchao Xie, Jie Shan +1
Two-dimensional (2D) layered materials possess outstanding mechanical, electronic and optical properties, making them ideal materials for nanoelectromechanical applications. The re…
Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide -MoTe
Gregory M. Stiehl, Ruofan Li, Vishakha Gupta +8
Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnet…
Long valley lifetime of dark excitons in single-layer WSe2
Yanhao Tang, Kin Fai Mak, Jie Shan
Single-layer transition metal dichalcogenides (TMDs) provide a promising material system to explore the electron's valley degree of freedom as a quantum information carrier. The va…
Observation of the nonlinear anomalous Hall effect in 2D WTe2
Kaifei Kang, Tingxin Li, Egon Sohn +2
The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the…
Spin transistor built on 2D van der Waals heterostructures
Shengwei Jiang, Lizhong Li, Zefang Wang +2
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation…
Electric-field switching of two-dimensional van der Waals magnets
Shengwei Jiang, Jie Shan, Kin Fai Mak
Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM s…
Valley-spin polarized Landau levels in a monolayer semiconductor
Zefang Wang, Jie Shan, kin Fai Mak
Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal…
Control of valley polarization in monolayer MoS2 by optical helicity
Kin Fai Mak, Keliang He, Jie Shan +1
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge…
Structurally Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene
Zhiqiang Li, Chun Hung Lui, Emmanuele Cappelluti +5
The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric feature…
Observation of an electrically tunable band gap in trilayer graphene
Chun Hung Lui, Zhiqiang Li, Kin Fai Mak +2
A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene la…
The Electronic Structure of Few-Layer Graphene: Probing the Evolution from a 2-Dimensional to a 3-Dimensional Material
Kin Fai Mak, Matthew Y. Sfeir, James A. Misewich +1
While preserving many of the unusual features of single-layer graphene, few-layer graphene (FLG) provides a richness and flexibility of electronic structure that render this set of…