42 citations · 91 across the 4 of their papers we have counts for
4 papers
Structural properties of CoTiSi films on GaAs(001)
B Jenichen, J Herfort, M Hanke +6
CoTiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray dif…
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…
Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
Esperanza Luna, Álvaro Guzmán, Achim Trampert +1
We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimon…