114 citations · 411 across the 8 of their papers we have counts for
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Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke +4
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced b…
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7
Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…
Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
Esperanza Luna, Álvaro Guzmán, Achim Trampert +1
We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimon…