A. Lal

activity

20162024

_{x}

_{1 - x}

N on GaN is a High K Dielectric

70 citations · 145 across the 6 of their papers we have counts for

collaborators

Showing 2021Show all

2 papers · 1 filter

physics.app-ph2021★ 70 cited

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N on GaN is a High K Dielectric

Joseph Casamento, Hyunjea Lee, Takuya Maeda +7

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ( $ε_{r}$ ) values relative to AlN.…

physics.acc-ph2021★ 8 cited

Beam power scale-up in MEMS based multi-beam ion accelerators

Q. Ji, K. K. Afridi, T. Bauer +9

We report on the development of multi-beam RF linear ion accelerators that are formed from stacks of low cost wafers and describe the status of beam power scale-up using an array o…

Epitaxial Scx​Al1−x​N on GaN is a High K Dielectric

Beam power scale-up in MEMS based multi-beam ion accelerators

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N on GaN is a High K Dielectric