61 citations · 112 across the 4 of their papers we have counts for
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Highly Polarizable Semiconductors and Universal Origin of Ferroelectricity in Materials with a Litharge-Type Structural Unit
Ziye Zhu, Jiaming Hu, Yubo Yuan +3
We discover that a large family of [PbF]- and [BiO]-based mixed-anion materials with a litharge-type structural unit are highly polarizable layered semiconductors o…
Polar discontinuities and interfacial electronic properties of BiOSe on SrTiO
Ziye Zhu, Jingshan Qi, Xiaorui Zheng +2
The layered oxychalcogenide semiconductor BiOSe (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattic…
Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering
Mengqi Wu, Zhefeng Lou, Chen-Min Dai +8
Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on…
Giant modulation of the electron mobility in semiconductor BiOSe via incipient ferroelectric phase transition
Ziye Zhu, Xiaoping Yao, Shu Zhao +2
High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observ…