Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures

Pietro Pampili, Vitaly Z. Zubialevich, Badal Mondal +4

In this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminium content AlGaN/AlGaN heterostructures. On the one hand, t…