9 citations · 12 across the 4 of their papers we have counts for
4 papers
Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
Pietro Pampili, Vitaly Z. Zubialevich, Badal Mondal +4
In this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminium content AlGaN/AlGaN heterostructures. On the one hand, t…
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…
Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications
Jagori Raychaudhuri, Jayjit Mukherjee, Amit Malik +4
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transie…
Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects
Jagori Raychaudhuri, Jayjit Mukherjee, Sudhir Kumar +3
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg 0.15m). We have studied the effect of short gat…