activity
20232026
most citedInvestigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

9 citations · 12 across the 4 of their papers we have counts for

collaborators
Showing 2025Show all

1 paper · 1 filter

cond-mat.mtrl-sci2025★ 2 cited

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3

Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…