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20232026
most citedPerformance analysis of InAlN/GaN HEMT and optimization for high frequency applications

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cond-mat.mtrl-sci2025

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3

Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…