David S. Catherall

activity

20232026

most citedIsotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF

_{6} /

_{2}

plasma

20 citations · 35 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Characterization of ultrathin nickel films deposited by thermal laser evaporation

David S. Catherall, Yifei Yan, Finley B. Donachie +2

Thermal laser evaporation is a physical vapor deposition technique of increasing interest because of its ability to evaporate essentially any solid element, even the most refractor…

cond-mat.mtrl-sci2025★ 2 cited

Atomic layer etching of niobium nitride using sequential exposures of O $_{2}$ and H $_{2}$ /SF $_{6}$ plasmas

Azmain A. Hossain, Sela Murphy, David S. Catherall +2

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ( $T_{c}$ ) and kinetic inductance. Proces…

physics.app-ph2024★ 12 cited

Atomic layer etching of SiO $_{2}$ using sequential exposures of Al(CH $_{3}$ ) $_{3}$ and H $_{2}$ /SF $_{6}$ plasma

David Catherall, Azmain Hossain, Austin Minnich

On-chip photonic devices based on SiO $_{2}$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO $_{2}$ microdisk resonators have achie…

cond-mat.mes-hall2023★ 1 cited

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H $_{2}$ and SF $_{6}$ plasmas

Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine +7

Lithium niobate (LiNbO $_{3}$ , LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart perio…

cond-mat.mes-hall2023★ 20 cited

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF $_{6} /$ H $_{2}$ plasma

Azmain A. Hossain, Haozhe Wang, David S. Catherall +4

Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced…

cond-mat.mtrl-sci2023

Hot hole transport and noise phenomena in silicon at cryogenic temperatures from first principles

David S. Catherall, Austin J. Minnich

The transport properties of hot holes in silicon at cryogenic temperatures exhibit several anomalous features, including the emergence of two distinct saturated drift velocity regi…

Characterization of ultrathin nickel films deposited by thermal laser evaporation

Atomic layer etching of niobium nitride using sequential exposures of O2​ and H2​/SF6​ plasmas

Atomic layer etching of SiO2​ using sequential exposures of Al(CH3​)3​ and H2​/SF6​ plasma

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2​ and SF6​ plasmas

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF6​/H2​ plasma

Hot hole transport and noise phenomena in silicon at cryogenic temperatures from first principles

Atomic layer etching of niobium nitride using sequential exposures of O $_{2}$ and H $_{2}$ /SF $_{6}$ plasmas

Atomic layer etching of SiO $_{2}$ using sequential exposures of Al(CH $_{3}$ ) $_{3}$ and H $_{2}$ /SF $_{6}$ plasma

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H $_{2}$ and SF $_{6}$ plasmas

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF $_{6} /$ H $_{2}$ plasma