David S. Catherall

activity

20232026

most citedIsotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF

_{6} /

_{2}

plasma

20 citations · 35 across the 6 of their papers we have counts for

collaborators

Showing 2023Show all

3 papers · 1 filter

cond-mat.mes-hall2023★ 1 cited

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H $_{2}$ and SF $_{6}$ plasmas

Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine +7

Lithium niobate (LiNbO $_{3}$ , LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart perio…

cond-mat.mes-hall2023★ 20 cited

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF $_{6} /$ H $_{2}$ plasma

Azmain A. Hossain, Haozhe Wang, David S. Catherall +4

Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced…

cond-mat.mtrl-sci2023

Hot hole transport and noise phenomena in silicon at cryogenic temperatures from first principles

David S. Catherall, Austin J. Minnich

The transport properties of hot holes in silicon at cryogenic temperatures exhibit several anomalous features, including the emergence of two distinct saturated drift velocity regi…

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2​ and SF6​ plasmas

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF6​/H2​ plasma

Hot hole transport and noise phenomena in silicon at cryogenic temperatures from first principles

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H $_{2}$ and SF $_{6}$ plasmas

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF $_{6} /$ H $_{2}$ plasma