Azmain A. Hossain

activity

20222026

most citedIsotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF

_{6} /

_{2}

plasma

20 citations · 35 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Characterization of ultrathin nickel films deposited by thermal laser evaporation

David S. Catherall, Yifei Yan, Finley B. Donachie +2

Thermal laser evaporation is a physical vapor deposition technique of increasing interest because of its ability to evaporate essentially any solid element, even the most refractor…

cond-mat.mtrl-sci2025★ 2 cited

Atomic layer etching of niobium nitride using sequential exposures of O $_{2}$ and H $_{2}$ /SF $_{6}$ plasmas

Azmain A. Hossain, Sela Murphy, David S. Catherall +2

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ( $T_{c}$ ) and kinetic inductance. Proces…

physics.app-ph2024★ 12 cited

Atomic layer etching of SiO $_{2}$ using sequential exposures of Al(CH $_{3}$ ) $_{3}$ and H $_{2}$ /SF $_{6}$ plasma

David Catherall, Azmain Hossain, Austin Minnich

On-chip photonic devices based on SiO $_{2}$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO $_{2}$ microdisk resonators have achie…

cond-mat.mes-hall2023★ 1 cited

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H $_{2}$ and SF $_{6}$ plasmas

Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine +7

Lithium niobate (LiNbO $_{3}$ , LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart perio…

cond-mat.mes-hall2023★ 20 cited

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF $_{6} /$ H $_{2}$ plasma

Azmain A. Hossain, Haozhe Wang, David S. Catherall +4

Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced…

cond-mat.mes-hall2022

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$

Haozhe Wang, Azmain Hossain, David Catherall +1

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF $_{6}$ plasma and trimethylaluminum (Al(CH $_{3}$ ) $_{3}$ , TMA). ALE was obser…

Characterization of ultrathin nickel films deposited by thermal laser evaporation

Atomic layer etching of niobium nitride using sequential exposures of O2​ and H2​/SF6​ plasmas

Atomic layer etching of SiO2​ using sequential exposures of Al(CH3​)3​ and H2​/SF6​ plasma

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2​ and SF6​ plasmas

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF6​/H2​ plasma

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF6​ plasma and Al(CH3​)3​

Atomic layer etching of niobium nitride using sequential exposures of O $_{2}$ and H $_{2}$ /SF $_{6}$ plasmas

Atomic layer etching of SiO $_{2}$ using sequential exposures of Al(CH $_{3}$ ) $_{3}$ and H $_{2}$ /SF $_{6}$ plasma

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H $_{2}$ and SF $_{6}$ plasmas

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF $_{6} /$ H $_{2}$ plasma

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$