178 citations · 544 across the 5 of their papers we have counts for
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Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance
Kartik Ganapathi, Youngki Yoon, Sayeef Salahuddin
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the…
Non-Linear Temperature Dependence in Graphene Nanoribbon Tunneling Transistors
Youngki Yoon, Sayeef Salahuddin
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold…
Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
Youngki Yoon, Gianluca Fiori, Seokmin Hong +2
We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of t…
Effect of edge roughness in graphene nanoribbon transistors
Youngki Yoon, Jing Guo
The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the…
Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
Yijian Ouyang*, Youngki Yoon*, Jing Guo
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport e…
Effect of Phonon Scattering on Intrinsic Delay and Cut-Off Frequency of Carbon Nanotube FETs
Youngki Yoon, Yijian Ouyang, Jing Guo
The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier carbon nanotube (CNT) FETs is examined by self-consistently solving the Poisson equ…