activity
20082015
most citedField-effect tunneling transistor based on vertical graphene heterostructures

2.6k citations · 17.8k across the 24 of their papers we have counts for

collaborators
Showing 2012Show all

5 papers · 1 filter

cond-mat.mes-hall2012★ 1.3k cited

Cloning of Dirac fermions in graphene superlattices

L. A. Ponomarenko, R. V. Gorbachev, G. L. Yu +15

Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored elec…

cond-mat.mes-hall2012★ 1.8k cited

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Thanasis Georgiou, Rashid Jalil, Branson D. Belle +12

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the cre…

cond-mat.mes-hall2012★ 992 cited

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

S. J. Haigh, A. Gholinia, R. Jalil +7

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic propert…

cond-mat.mes-hall2012★ 70 cited

Phonon and structural changes in deformed Bernal stacked bilayer graphene

Otakar Frank, Milan Bousa, Ibtsam Riaz +7

We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers…

cond-mat.mes-hall2012★ 920 cited

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Liam Britnell, Roman V. Gorbachev, Rashid Jalil +12

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well…