2.6k citations · 17.8k across the 24 of their papers we have counts for
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Field-effect tunneling transistor based on vertical graphene heterostructures
L. Britnell, R. V. Gorbachev, R. Jalil +10
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devi…
Raman 2D-Band Splitting in Graphene: Theory and Experiment
Otakar Frank, Marcel Mohr, Janina Maultzsch +9
We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D…
Micrometer-scale ballistic transport in encapsulated graphene at room temperature
A. S. Mayorov, R. V. Gorbachev, S. V. Morozov +8
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-…