activity
20232025
most citedDemonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

2 citations · 3 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2025★ 1 cited

Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays

Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12

We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…

cond-mat.mtrl-sci2025

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN

Hyunmin Cho, Yubo Wang, Chloe Leblanc +5

Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…

cond-mat.mes-hall2025★ 2 cited

Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13

Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…

physics.app-ph2024

Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures

Soumya Sarkar, Zirun Han, Maheera Abdul Ghani +5

Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel non-volatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a…

cond-mat.mtrl-sci2024

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6

The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…

physics.app-ph2023

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C

Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…

cond-mat.mtrl-sci2023

MoS/AlScN negative capacitance field-effect transistors

Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi +6

AlScN (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-bas…