Zirun Han

activity

20232025

most citedDemonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

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2 citations · 3 across the 7 of their papers we have counts for

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physics.app-ph2023

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^{\circ}$ C

Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^{\circ}$ C are currently non-existent and remains a critically unmet challenge in the development o…

cond-mat.mtrl-sci2023

MoS $_{2}$ /Al $_{0.68}$ Sc $_{0.32}$ N negative capacitance field-effect transistors

Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi +6

Al $_{0.68}$ Sc $_{0.32}$ N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-bas…

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 ∘C

MoS2​/Al0.68​Sc0.32​N negative capacitance field-effect transistors

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^{\circ}$ C

MoS $_{2}$ /Al $_{0.68}$ Sc $_{0.32}$ N negative capacitance field-effect transistors