Zirun Han

activity

20232025

most citedDemonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

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2 citations · 3 across the 7 of their papers we have counts for

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3 papers · 1 filter

cond-mat.mtrl-sci2025

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN

Hyunmin Cho, Yubo Wang, Chloe Leblanc +5

Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…

cond-mat.mtrl-sci2024

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6

The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…

cond-mat.mtrl-sci2023

MoS $_{2}$ /Al $_{0.68}$ Sc $_{0.32}$ N negative capacitance field-effect transistors

Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi +6

Al $_{0.68}$ Sc $_{0.32}$ N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-bas…

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

MoS2​/Al0.68​Sc0.32​N negative capacitance field-effect transistors

MoS $_{2}$ /Al $_{0.68}$ Sc $_{0.32}$ N negative capacitance field-effect transistors