activity
20232026
most citedDemonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

2 citations · 4 across the 11 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2026

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN

Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12

Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…

cond-mat.mtrl-sci2025

Low-Field Ferroelectricity in 10 nm AlBScN Thin Films

Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5

Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…

cond-mat.mtrl-sci2025★ 1 cited

Evolution of electronic and magnetic properties in Mn- and Co-alloyed ferromagnetic kagome metal Fe3Sn2

Prajwal M. Laxmeesha, Rajesh Dutta, Rajeev Kumar Rai +14

Kagome metals are an intriguing class of quantum materials as the presence of both flat bands and Dirac points provides access to functional properties present in strongly correlat…

cond-mat.mtrl-sci2025

Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode

Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4

Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…

cond-mat.mtrl-sci2024

Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures

Prajwal M. Laxmeesha, Tessa D. Tucker, Rajeev Kumar Rai +5

Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands…

cond-mat.mtrl-sci2023

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Sandeep Vura, Shubham Kumar Parate, Subhajit Pal +15

Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoe…

cond-mat.mtrl-sci2023

Modulation-Doping a Correlated Electron Insulator

Debasish Mondal, Smruti Rekha Mahapatra, Abigail M Derrico +11

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (M…