2 citations · 4 across the 11 of their papers we have counts for
11 papers
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…
Evolution of electronic and magnetic properties in Mn- and Co-alloyed ferromagnetic kagome metal Fe3Sn2
Prajwal M. Laxmeesha, Rajesh Dutta, Rajeev Kumar Rai +14
Kagome metals are an intriguing class of quantum materials as the presence of both flat bands and Dirac points provides access to functional properties present in strongly correlat…
Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…
Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm
Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…
Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Heterostructures
Da Lin, Jason Lynch, Sudong Wang +9
Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broa…
Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
Prajwal M. Laxmeesha, Tessa D. Tucker, Rajeev Kumar Rai +5
Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands…
Large electro-opto-mechanical coupling in VO2 neuristors
Upanya Khandelwal, Rama Satya Sandilya, Rajeev Kumar Rai +8
Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuris…
Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100
Sandeep Vura, Shubham Kumar Parate, Subhajit Pal +15
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoe…
Modulation-Doping a Correlated Electron Insulator
Debasish Mondal, Smruti Rekha Mahapatra, Abigail M Derrico +11
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (M…