Jiahao Chen

activity

20232026

most citedCrack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

9 citations · 10 across the 5 of their papers we have counts for

collaborators

Showing 2026Show all

2 papers · 1 filter

physics.app-ph2026

Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz

Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +12

In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The…

cond-mat.mtrl-sci2026

Optimized growth of large-size, high quality $ZrTe_{5}$ single crystals enabling clear quantum oscillations in electrical transport

Hong Du, Yu Cao, Jiahao Chen +3

Quantum oscillation with nontrivial Berry phase is one of the characteristics of topological materials. As a Dirac semimetal candidate, zirconium pentatelluride ( $ZrTe_{5}$ ) s…

Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz

Optimized growth of large-size, high quality ZrTe5​ single crystals enabling clear quantum oscillations in electrical transport

Optimized growth of large-size, high quality $ZrTe_{5}$ single crystals enabling clear quantum oscillations in electrical transport