1 citations · 1 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2026
Optimized growth of large-size, high quality single crystals enabling clear quantum oscillations in electrical transport
Hong Du, Yu Cao, Jiahao Chen +3
Quantum oscillation with nontrivial Berry phase is one of the characteristics of topological materials. As a Dirac semimetal candidate, zirconium pentatelluride () s…
physics.app-ph2025
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +9
In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under t…
physics.app-ph2024★ 1 cited
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson +5
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 mi…