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Jiahao Chen

5 papers hereh-index 687 citations22 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author4

Across the 4 of 5 papers where every author was matched, so the position is known.

fields
  • physics.app-ph4
  • cond-mat.mtrl-sci1
same name
  • Jiahao Chen — 26 papers, h 4
  • Jiahao Chen — 20 papers, h 31
  • Jiahao Chen — 17 papers, h 12
  • Jiahao Chen — 12 papers, h 10
  • Jiahao Chen — 12 papers, h 7
  • Jiahao Chen — 8 papers, h 3

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20232026
most citedCrack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

9 citations · 10 across the 5 of their papers we have counts for

collaborators
Showing 2024Show all

1 paper · 1 filter

physics.app-ph2024★ 1 cited

High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs

Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson +5

High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 mi…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.