6 citations · 13 across the 6 of their papers we have counts for
5 papers · 1 filter
Telecom-band quantum memory with chlorine defects in silicon carbide
A. N. Anisimov, K. Mavridou, A. V. Mathews +2
Realization of quantum memory with a photonic interface in the telecommunication bands in a wafer-scalable platform is a central requirement for long-distance quantum networks. Sil…
Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
A. N. Anisimov, A. V. Mathews, K. Mavridou +3
We report the experimental realization and optical characterization of chlorine-vacancy (ClV) color centers in 4H-SiC emitting in the fiber-optic telecom bands. These defects are c…
Imaging of electrical signals in a quantum SiC microscope
A. Suhana, T. A. U. Svetikova, C. Schneider +3
We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents…
Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
M. Hollenbach, N. Klingner, P. Mazarov +8
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the l…
Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
A. Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach +2
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy () in silicon carbide makes it a promising system for applicatio…