Imaging of electrical signals in a quantum SiC microscope

Abstract

We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the readout contrast and suppress noise arising from strain and temperature fluctuations. This approach enables spatial imaging of current-induced magnetic fields with a field of view of $50\times 50$ virtual pixels, temporal resolution of $50\mathrm{ms}$, spatial resolution of $30\hat{\mathrm{I}}¼\mathrm{m}$ and sensitivity of about $2\hat{\mathrm{I}}¼\mathrm{T}\mathrm{H}{\mathrm{z}}^{-1/2}$ per pixel. Further sensitivity enhancement is anticipated through the use of isotopically purified SiC and improved light collection in crystallographically optimized wafer orientations. In addition, we implement a microwave-free imaging protocol based on spin level anticrossing, offering simplified operation with enhanced sensitivity. The demonstrated platform is compatible with commercial, wafer-scale fabrication and holds strong potential for applications in biomedical imaging and diagnostics, as well as non-invasive current and temperature mapping in high-power electronic devices.

9 pages, 8 figures