5 papers
Unconventional cross sections in zinc phosphide nanowires grown using exclusively earth-abundant components
Simon Escobar Steinvall, Hampus Thulin, Nico Kawashima +8
To enable lightweight and flexible solar cell applications it is imperative to develop direct bandgap absorber materials. Moreover, to enhance the potential sustainability impact o…
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…
Enhancing atomic-resolution in electron microscopy: A frequency-domain deep learning denoiser
Ivan Pinto-Huguet, Marc Botifoll, Xuli Chen +6
Atomic resolution electron microscopy, particularly high-angle annular dark-field scanning transmission electron microscopy, has become an essential tool for many scientific fields…
Interfaces in epitaxially grown Zn3P2 nanowires and their composition dependent optoelectronic properties for photovoltaic applications
Simon Escobar Steinvall, Francesco Salutari, Jonas Johansson +7
Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce cryst…
Reducing disorder in Ge quantum wells by using thick SiGe barriers
Davide Costa, Lucas E. A. Stehouwer, Yi Huang +4
We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semi…