40 citations · 74 across the 9 of their papers we have counts for
9 papers
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
Polarization Vortices in a Ferromagnetic Metal via Twistronics
Yingzhuo Lun, Xinxin Hu, Qi Ren +15
Recent advances in moire engineering provide new pathways for manipulating lattice distortions and electronic properties in low-dimensional materials. Here, we demonstrate that twi…
Vortices and antivortices in antiferroelectric PbZrO3
Ying Liu, Huazhang Zhang, Konstantin Shapovalov +8
Although ferroelectric materials are characterised by their parallel arrangement of electric dipoles, in the right boundary conditions these dipoles can reorganize themselves into…
Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
Ying Liu, Ranming Niu, Roger Uriach +7
Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferr…
Strong Charge-Photon Coupling in Planar Germanium Enabled by Granular Aluminium Superinductors
Marián Janík, Kevin Roux, Carla Borja Espinosa +11
High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum b…
Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS
Nicholas Stephen, Ivan Pinto-Huguet, Robert Lawrence +8
Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and strai…
Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-sca…
Low disorder and high valley splitting in silicon
Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…
Cryogenic Multiplexing with Bottom-Up Nanowires
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…