1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2025
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
cond-mat.mtrl-sci2025★ 1 cited
Vortices and antivortices in antiferroelectric PbZrO3
Ying Liu, Huazhang Zhang, Konstantin Shapovalov +8
Although ferroelectric materials are characterised by their parallel arrangement of electric dipoles, in the right boundary conditions these dipoles can reorganize themselves into…