28 citations · 47 across the 11 of their papers we have counts for
12 papers
A Silicon-Compatible Uncooled Compact Broadband Infrared Spectrometer
A. Nomezine, G. Daligou, D. Vlassov +3
Infrared spectroscopy is a widely used technique for molecular identification, yet its widespread deployment remains constrained by bulky instrumentation, cryogenic cooling require…
Extending Silicon Avalanche Photodetection Beyond m by Direct GeSn Integration
M. R. M. Atalla, J. Bélec, E. Rahier +5
Silicon avalanche photodiodes provide a technologically mature platform for sensitive photodetection, but their spectral response is intrinsically limited by the silicon bandgap. E…
Reduced Dark Current in Cd0.9Zn0.1Te Detector Arrays by Aluminium Oxide Passivation
Sudarshan Singh, Luc Montpetit, Eloïse Rahier +3
Contrary to the prevailing view that processing cadmium zinc telluride (CZT) semiconductors above 150 °C leads to irreversible device degradation, here we show that Al2O3 passivati…
Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell
Gérard Daligou, Mahmoud R. M. Atalla, Cédric Lemieux-Leduc +4
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deployin…
Polarization-sensitive GeSn Mid-Infrared Membrane Photodetectors with Integrated Plasmonic Metasurface
Ziqiang Cai, Cédric Lemieux-Leduc, Mahmoud R. M. Atalla +4
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operati…
Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +5
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing,…
Transfer-printed multiple GeSn membrane mid-infrared photodetectors
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…
Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon
Mahmoud R. M. Atalla, Cedric Lemieux-Leduc, Simone Assali +3
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic…
Mid-infrared top-gated Ge/GeSn nanowire phototransistors
Lu Luo, Mahmoud RM Atalla, Simone Assali +2
Achieving high crystalline quality GeSn semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-inf…
Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires
Lu Luo, Mahmoud RM Atalla, Simone Assali +3
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, fr…
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling +2
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and i…
Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable GeSn0
Salim Abdi, Simone Assali, Mahmoud R. M. Atalla +3
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fa…