82 citations · 101 across the 7 of their papers we have counts for
7 papers
Continuous-wave GeSn light emitting diodes on silicon with m room-temperature emission
Mahmoud R. M. Atalla, Simone Assali, Gérard Daligou +4
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applica…
Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon
Gérard Daligou, Richard Soref, Anis Attiaoui +4
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming.…
Extended-SWIR GeSn LEDs with reduced footprint and power consumption
Mahmoud R. M. Atalla, Youngmin Kim, Simone Assali +3
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myri…
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
M. R. M. Atalla, S. Assali, S. Koelling +2
The availability of high-frequency pulsed emitters in the m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fibe…
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
Lu Luo, Simone Assali, Mahmoud R. M. Atalla +6
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we e…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
All-Group IV membrane room-temperature mid-infrared photodetector
Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui +4
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In th…