7 citations · 25 across the 9 of their papers we have counts for
5 papers · 1 filter
Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +12
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitatio…
A topological field-effect memristor
Manuel Meyer, Selena Barragan, Sergey Krishtopenko +13
Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing…
Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
Manuel Meyer, Jonas Baumbach, Sergey Krishtopenko +13
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional…
Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +7
We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrica…
Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
M. Meyer, S. Schmid, F. Jabeen +3
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal…