22 citations · 35 across the 23 of their papers we have counts for
6 papers · 1 filter
Reconfigurable SWCNT ferroelectric field-effect transistor arrays
Dongjoon Rhee, Kwan-Ho Kim, Jeffrey Zheng +5
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct c…
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Seunguk Song, Kwan-Ho Kim, Rachael Keneipp +7
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-gene…
Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era
Izhar, M. M. A. Fiagbenu, S. Yao +9
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequ…
Materials for High Temperature Digital Electronics
Dhiren K. Pradhan, David C. Moore, A. Matt Francis +5
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio…
Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…