22 citations · 35 across the 23 of their papers we have counts for
24 papers
Towards a monolithic platform for coupling superconducting circuits to low-loss microwave phonons in AlScN on 4H-SiC
Yuanchen Deng, William W. Roberts, Sueli Skinner-Ramos +12
Hybrid superconducting-phonon quantum processing is promising for cavity QED, measurement-based quantum computing, and other quantum applications. Relative to microwave photons at…
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Tuning Breakdown-to-Coercive Field Ratio in Ultra-Thin Al1-xScxN Films via Reactive Nitrogen Atmosphere
Yinuo Zhang, Walter J. Smith, Giovanni Esteves +3
Al1-xScxN has attracted significant interest due to its large remnant polarization and low processing temperature when compared to other ferroelectric material systems. However, de…
Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…
A 5.9 GHz Sezawa SAW Acoustic Delay Line Based on Al0.6Sc0.4N-on-Sapphire with Propagation Q-factor > 3,000
Chin-Yu Chang, Xiaolei Tong, Pedram Yousefian +3
In this work, we demonstrate a high-performance surface acoustic wave (SAW) delay line based on a Scandium alloyed aluminum nitride (AlScN)-on-sapphire platform operating at 5.9 GH…
Spatially tailored spin wave excitation for spurious-free, low-loss magnetostatic wave filters with ultra-wide frequency tunability
Shuxian Wu, Shun Yao, Xingyu Du +2
Yttrium iron garnet magnetostatic wave (MSW) radio frequency (RF) cavity filters are promising for sixth-generation (6G) communication systems due to their wide frequency tunabilit…
Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12
We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…
Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…
Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
Pedram Yousefian, Xiaolei Tong, Jonathan Tan +3
This paper presents high-temperature ferroelectric characterization of 40~nm AlBScN (AlBScN) thin film capacitors grown by co-sputtering AlB and…
A Wideband Tunable, Nonreciprocal Bandpass Filter Using Magnetostatic Surface Waves with Zero Static Power Consumption
Xingyu Du, Yixiao Ding, Shun Yao +7
Modern wireless systems demand compact, power-efficient RF front-end components that support wideband tunability and nonreciprocity. We present a new class of miniature bandpass fi…
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
Hyunmin Cho, Yubo Wang, Chloe Leblanc +5
Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…
Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm
Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…
Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
Seunguk Song, Dhiren K. Pradhan, Zekun Hu +7
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferr…
Reconfigurable SWCNT ferroelectric field-effect transistor arrays
Dongjoon Rhee, Kwan-Ho Kim, Jeffrey Zheng +5
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct c…
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Seunguk Song, Kwan-Ho Kim, Rachael Keneipp +7
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-gene…
Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era
Izhar, M. M. A. Fiagbenu, S. Yao +9
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequ…
Materials for High Temperature Digital Electronics
Dhiren K. Pradhan, David C. Moore, A. Matt Francis +5
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio…
Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…
Near 6 GHz Sezawa Mode Surface Acoustic Wave Resonators using AlScN on SiC
Xingyu Du, Nishant Sharma, Zichen Tang +3
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal re…
Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo +9
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applicat…
S-band acoustoelectric amplifier utilizing an ultra-high thermal conductivity heterostructure for low self-heating
Lisa Hackett, Xingyu Du, Michael Miller +9
Here we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin AlScN film grown directly on a 4H-SiC substrate with an…
Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C
Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…