most citedReconfigurable SWCNT ferroelectric field-effect transistor arrays

2 citations · 3 across the 7 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2025

Tuning Breakdown-to-Coercive Field Ratio in Ultra-Thin Al1-xScxN Films via Reactive Nitrogen Atmosphere

Yinuo Zhang, Walter J. Smith, Giovanni Esteves +3

Al1-xScxN has attracted significant interest due to its large remnant polarization and low processing temperature when compared to other ferroelectric material systems. However, de…

physics.app-ph2025

A 5.9 GHz Sezawa SAW Acoustic Delay Line Based on Al0.6Sc0.4N-on-Sapphire with Propagation Q-factor > 3,000

Chin-Yu Chang, Xiaolei Tong, Pedram Yousefian +3

In this work, we demonstrate a high-performance surface acoustic wave (SAW) delay line based on a Scandium alloyed aluminum nitride (AlScN)-on-sapphire platform operating at 5.9 GH…

eess.SP2025

Spatially tailored spin wave excitation for spurious-free, low-loss magnetostatic wave filters with ultra-wide frequency tunability

Shuxian Wu, Shun Yao, Xingyu Du +2

Yttrium iron garnet magnetostatic wave (MSW) radio frequency (RF) cavity filters are promising for sixth-generation (6G) communication systems due to their wide frequency tunabilit…

cond-mat.mes-hall20251 cited

Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays

Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12

We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…

cond-mat.mtrl-sci2025

Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode

Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4

Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…

cond-mat.mtrl-sci2025

Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation

Pedram Yousefian, Xiaolei Tong, Jonathan Tan +3

This paper presents high-temperature ferroelectric characterization of 40~nm AlBScN (AlBScN) thin film capacitors grown by co-sputtering AlB and…