1 citations · 2 across the 2 of their papers we have counts for
4 papers
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu +14
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurr…
A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
Xiwen Liu, Jeffrey Zheng, Dixiong Wang +4
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandi…
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…
Physical Signal Classification Via Deep Neural Networks
Benjamin Epstein, Roy H. Olsson
A Deep Neural Network is applied to classify physical signatures obtained from physical sensor measurements of running gasoline and diesel-powered vehicles and other devices. The c…