most citedSingle-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation

3 citations · 3 across the 3 of their papers we have counts for

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cs.ET2025★ 3 cited

Single-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation

Rudra Biswas, Jiahui Duan, Shan Deng +7

This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-effici…

cs.ET2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate

Zijian Zhao, Sola Woo, Khandker Akif Aabrar +22

In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. W…