3 papers
cs.CR2025
In-Situ Encryption of Single-Transistor Nonvolatile Memories without Density Loss
Sanwar Ahmed Ovy, Jiahui Duan, Md Ashraful Islam Romel +4
Non-volatile memories (NVMs) offer negligible leakage power consumption, high integration density, and data retention, but their non-volatility also raises the risk of data exposur…
cs.ET2025
Single-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation
Rudra Biswas, Jiahui Duan, Shan Deng +7
This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-effici…
cs.ET2024
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Zijian Zhao, Sola Woo, Khandker Akif Aabrar +22
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. W…