11 citations · 23 across the 14 of their papers we have counts for
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Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
Lukas Cvitkovich, Peter Stano, Dominique Bougeard +2
Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the resulting valley…
Disorder-independent hole spin manipulation by hopping
Biel Martinez, Ana Sempere-Sanchis, José C. Abadillo-Uriel +1
Spin manipulation by hopping has recently emerged as a promising strategy to control hole spins in quantum dots using exclusively baseband control, thereby mitigating power dissipa…
Valley physics in the two bands model for SiGe heterostructures and spin qubits
Tancredi Salamone, Biel Martinez Diaz, Jing Li +2
We discuss the choice and implementation of inter-valley potentials in the so-called two bands model for the opposite , or valleys of silicon…
Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling
Esteban A. Rodríguez-Mena, Biel Martínez, Ahmad Fouad Kalo +2
Recent advances in the scaling of spin qubits have led to the development of sparse architectures where spin qubits are distributed across multiple quantum dots. This distributed a…
Variability of hole spin qubits in planar Germanium
Biel Martinez, Yann-Michel Niquet
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical…
Hole spin qubits in unstrained Germanium layers
Lorenzo Mauro, Mauricio J. Rodriguez, Esteban A. Rodriguez-Mena +1
Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the o…
Dressed basis sets for the modeling of exchange interactions in double quantum dots
Mauricio J. Rodríguez, Esteban A. Rodríguez-Mena, Ahmad Fouad Kalo +1
We discuss the microscopic modeling of exchange interactions between double semiconductor quantum dots used as spin qubits. Starting from a reference full configuration interaction…
Optimal operation of hole spin qubits
Marion Bassi, Esteban-Alonso Rodrıguez-Mena, Boris Brun +11
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing…
A two-dimensional 10-qubit array in germanium with robust and localised qubit control
Valentin John, Cécile X. Yu, Barnaby van Straaten +10
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and hi…
Strain engineering in Ge/GeSi spin qubits heterostructures
Lorenzo Mauro, Esteban A. Rodríguez-Mena, Biel Martinez +1
The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane -factors and out-of-plane -factor $g_z^*\gtrsi…
Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
Lukas Cvitkovich, Peter Stano, Christoph Wilhelmer +4
On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promis…
Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout
Biel Martinez, Silvano de Franceschi, Yann-Michel Niquet
The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which…